The wafer-scale integration of advanced optical, electrical, and micromechanical semiconductor devices on a single chip requires techniques for combining differing semiconductor structures in the plane of the wafer. We have developed a technique for achieving large-scale monolithic integration of lattice-mismatched materials in the vertical direction and the lateral integration of dissimilar lattice-matched structures. The technique uses a single nonplanar wafer-bonding step to transform epitaxial structures into lateral epitaxial variation across the surface of a wafer.


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    Titel :

    Vertical and lateral heterogeneous integration


    Beteiligte:
    Geske, J. (Autor:in) / Jayaraman, V. (Autor:in) / Okuno, Y.L. (Autor:in) / Bowers, J.E. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    258862 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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