In this study, silicon nanocrystals embedded in SiO/sub 2/ matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250 /spl deg/C to RT, the PL intensity increases by two orders of magnitude.


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    Titel :

    Strong red light emission from silicon nanocrystals embedded in SiO/sub 2/ matrix


    Beteiligte:
    Chen, W.D. (Autor:in) / Wang, Y.Q. (Autor:in) / Chen, C.Y. (Autor:in) / Diao, H.W. (Autor:in) / Liao, X.B. (Autor:in) / Kong, G.L. (Autor:in) / Hsu, C.C. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    271723 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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