In this study, silicon nanocrystals embedded in SiO/sub 2/ matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250 /spl deg/C to RT, the PL intensity increases by two orders of magnitude.
Strong red light emission from silicon nanocrystals embedded in SiO/sub 2/ matrix
2002-01-01
271723 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Strong Red Light Emission from Silicon Nanocrystals Embedded in SiO~2 Matrix
British Library Conference Proceedings | 2002
|Silicon nanocrystals in carbide matrix
Online Contents | 2014
|Silicon nanocrystals embedded in silicon carbide as a wide-band gap photovoltaic material
Online Contents | 2016
|