We present a way to find the optimal device design region for the MQB structure by introducing the blocking efficiency for the leakage carriers. Our method can be used to calculate the improvement on the differential quantum efficiency for any MQB designs.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Improved differential quantum efficiency for long-wavelength InGaAs/InGaAsP/InP SCH-SQW lasers with optimized multi-quantum barriers (MQB) design


    Beteiligte:
    Kuo Feng Chen (Autor:in) / Wei Hsin (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    172753 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Characteristic analysis of InGaAs/InGaAsP strained quantum well lasers

    Ma, C. / Han, C. / Liu, S. | British Library Online Contents | 1997


    Selective Undercut Etching of InGaAs and InGaAsP Quantum Wells for Improved Performance of Long-Wavelength Optoelectronic Devices

    Pasquariello, D. / Bjorlin, E. S. / Lasaosa, D. et al. | British Library Online Contents | 2006


    Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot lasers

    Pyun, S.H. / Lee, S.H. / Lee, I.C. et al. | IEEE | 2004


    Room Temperature cw Operation of InGaAs/InGaAsP/InP Quantum Dot Lasers

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004