We report the first direct measurement of near-band edge (within several meV) Franz-Keldysh electrorefraction in GaAs using thin film, P-i-N double heterostructures and MSM structures fabricated using epitaxial liftoff processing. Thin metallic films are applied to the top and bottom surfaces of the devices and are used as both electrical contacts and mirrors.<>
Determination of Franz-Keldysh electrorefraction near the GaAs absorption edge using epitaxial liftoff thin film semiconductor etalons
Proceedings of LEOS '93 ; 339-340
01.01.1993
147033 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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