Because of the good thermal conductivity and low on-resistance, SiC MOSFET has broad prospects in aerospace applications. Low-temperature environment often exists in the aerospace field. The low-temperature reliability of the SiC MOSFET interface is relatively poor because of the interface traps. To investigate the low-temperature characterization, the aging mechanism of interface traps (ITs) is analyzed by combining band theory and TCAD simulation. This study shows that the ITs increase at low temperatures, which results in device characteristics drifting more obviously. Moreover, a method for the complete analysis of SiC/SiO2 characterization was established based on the capacitance-voltage characteristic. The piecewise CV-based method can accurately judge the interface characteristics of different SiC/SiO2 interface regions of SiC MOSFET. Finally, CV experiments were carried out to verify the accuracy of the analysis results. Experimental results show that when gate biases are applied, more traps are charged by either holes or electrons at low temperatures, which will result in the traps expanding within the oxide layer more rapidly. The characterization of low-temperature based on the CV characteristic is of great significance to improve the performance of the system.


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    Titel :

    Characterization of Low-Temperature for SiC MOSFET Based On the Capacitance-Voltage Characteristic


    Beteiligte:
    Ding, Xiaofeng (Autor:in) / Zhao, Yujia (Autor:in) / Yang, Yanyong (Autor:in)


    Erscheinungsdatum :

    28.10.2022


    Format / Umfang :

    725377 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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