Vertical cavity surface emitting lasers (VCSELs) for optical interconnections operating at 1.07 /spl mu/m have been developed. Active layers of the devices are InGaAs/GaAs MQWs, which are suitable for high-speed operation and high reliability. The devices exhibit -3 dB modulation bandwidths up to 19 GHz and no degradation under 70/spl deg/C 1000 hour APC tests.


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    Titel :

    1.1 /spl mu/m range InGaAs VCSELs for high-speed optical interconnections


    Beteiligte:
    Suzuki, N. (Autor:in) / Hatakeyama, H. (Autor:in) / Tokutome, K. (Autor:in) / Yamada, M. (Autor:in) / Anan, T. (Autor:in) / Tsuji, M. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    205000 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005


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    Van Daele, P. / Geerinck, P. / Van Steenberge, G. et al. | British Library Conference Proceedings | 2003


    High-Temperature Dynamics, High-Speed Modulation, and Transmission Experiments Using 1.3-mum InGaAs Single-Mode VCSELs

    Soderberg, E. / Gustavsson, J. S. / Modh, P. et al. | British Library Online Contents | 2007


    High-speed high-density parallel free-space optical interconnections

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