GalnP/AIGalnP visible light emitting laser diodes arc of great interest. for use in high-density Optical Data Storage and laser printing. Low electrical power consumption and reliable high optical power output at a wavelength of /spl lambda = 675nm are a prerequisite for these applications.


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    Titel :

    Ordered and disordered GalnP/AlGalnP Strained Layer Quantum Well Visible-Light Emitting Laser Diodes


    Beteiligte:
    van der Poel, C.J. (Autor:in) / Valster, A. (Autor:in) / Finke, M.N. (Autor:in) / Boermans, M.I.B. (Autor:in)


    Erscheinungsdatum :

    1992-01-01


    Format / Umfang :

    145872 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Ordered and Disordered GaInP/AlGaInP Strained Layer Quantum Well Visible-Light Emitting Laser Diodes

    Van der Poel, C. J. / Valster, A. / Finke, M. N. et al. | British Library Conference Proceedings | 1992


    Strained Quantum Well AlGaInP Visible Laser Diodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    1.02 m Strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GalnP Buried Waveguides

    Ishikawa, S. / Fukagai, K. / Miyazaki, T. et al. | British Library Conference Proceedings | 1992


    Strain-induced effects on the performance of AlGalnP Visible Lasers

    Hashimoto, J. / Katsuyama, T. / Shinkai, J. et al. | IEEE | 1992


    Comparison of experimental and calculated GalnP quantum well gain spectra

    Chow, W.W. / Smowton, P.M. / Blood, P. et al. | IEEE | 1997