Light ournut Dower over 1OOmW is obtained even at 60°C from each element of a four-beam laser wrth a mple*quantum well active layer. This laser has a buried-ridge, inner-stripe structure formed by a newly developed etching stop technique, which realizes reproducible fabrication of a multi-beam laser with excellent and uniform characteristics For an individually addressable laser array for parallel data processing.


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    Titel :

    High-power multi-beam AlGaAs TQW lasers with buried-ridge, stripe structure fabricated by using novel etching stop technique


    Beteiligte:
    Shima, A. (Autor:in) / Kadowaki, T. (Autor:in) / Tada, H. (Autor:in) / Miura, T. (Autor:in) / Shiba, T. (Autor:in) / Miyashita, M. (Autor:in) / Omura, E. (Autor:in) / Aiga, M. (Autor:in) / Ikeda, K. (Autor:in)


    Erscheinungsdatum :

    01.01.1992


    Format / Umfang :

    186356 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High-Power Multi-Beam AlGaAs TQW Lasers with Buried-Ridge, Stripe Structure Fabricated by Using Novel Etching Stop Technique

    Shima, A. / Kadowaki, T. / Tada, H. et al. | British Library Conference Proceedings | 1992




    Beam Stop For High-Power Lasers

    Mcdermid, Iain S. / Williamson, William B. | NTRS | 1990


    AlGaAs Lasers Fabricated with Pulsed Anodic Oxides

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993