We have developed APDs designed for 10 Gb/s and 40 Gb/s receivers. A multimode waveguide structure and a very thin InAlAs multiplication layer enable high quantum efficiency, a high bandwidth, and low-voltage operation. Therefore, the waveguide structure is suitable for 10 Gb/s or higher bit rate APD receivers. In this paper, an InAlAs multiplication layer thickness is optimised so as to achieve low dark current and high GB product for 10-40 Gb/s high-sensitivity receivers.


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    Titel :

    High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers


    Beteiligte:
    Nakata, T. (Autor:in) / Takeuchi, T. (Autor:in) / Makita, K. (Autor:in) / Torikai, T. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    171809 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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