We have developed APDs designed for 10 Gb/s and 40 Gb/s receivers. A multimode waveguide structure and a very thin InAlAs multiplication layer enable high quantum efficiency, a high bandwidth, and low-voltage operation. Therefore, the waveguide structure is suitable for 10 Gb/s or higher bit rate APD receivers. In this paper, an InAlAs multiplication layer thickness is optimised so as to achieve low dark current and high GB product for 10-40 Gb/s high-sensitivity receivers.
High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers
2001-01-01
171809 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
ThN3 High-Speed and High-Sensitivity Waveguide InAlAs Avalanche Photodiodes for 10-40 Gb/s Receivers
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