The switch-off time in a dispersive bistable laser amplifier is usually considered to be limited by the inverse of the effective carrier lifetime, the switch-off can be faster with the laser diode operating very near threshold. On the other hand, optical bistability (OB) has also been found recently in optically injection-locked semiconductor lasers; in this case however the dynamic properties have not yet been investigated. Our measured results reveal that the OB switch-off can be much faster than the carrier lifetime when the slave laser is biased far above threshold. In the experiment, two identical 1554 nm DFB-BH laser diodes ase used in the master-slave mode.<>
Fast optical switching of dispersive bistable laser diodes in the injection-locked regime
Proceedings of LEOS '93 ; 518-519
01.01.1993
104594 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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