We have grown Al-free GaInAsP/GaInP 808 nm strained single quantum well laser structures by the gas source molecular beam epitaxy method. Processed laser bars are shown to possess very good performance in terms of efficiency and short term reliability. They could replace AlGaAs laser bars in high power applications if the future long term reliability tests correlate with the present short term reliability data.
High power Al-free 808 nm laser bars
01.01.1996
120457 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High Power Al-Free 808 nm Laser Bars
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