In this paper, transition between accumulation, depletion and inversion condition of transistor with 65nm channel length as a charge controlled device is studied. As a charge controlled device, doping and acceptor concentration in the deice affect to C(V) characteristic, consequently, to transient behavior. Considerably, investigation of off-current, Short Channel Effect(SCE)s are studied. For simplicity and accuracy, quasi-static model is used to model charge distribution in junction areas within the device.
Analysis of Donor and Acceptor Concentration Effect on 65nm NMOS Device
01.05.2019
295449 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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