Impedance matching of zero-bias millimeter-wave/THz diodes is examined in the context of THz communications receivers. Specifically, we present an active matching circuit that can realize Gb/s bandwidth performance for a 230GHz carrier frequency envelope detector. The active circuit consists of two transistor stages preceded by a 3rd order L/C matching network. Using a cascode stage followed by an emitter-follower, the baseband output impedance of THz diodes is matched to a standard 50Ω port of subsequent amplifier stage. Matched signal bandwidths as much as 1.2GHz can be achieved using this simple configuration. Examples demonstrate the performance and the benefits of the proposed active matching for high data rate THz receivers.
Wideband active matching of terahertz envelope detectors
2012-07-01
519231 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Polarisation-sensitive terahertz detectors
IEEE | 2005
|Terahertz Josephson detectors and Hilbert spectroscopy
IEEE | 2004
|Singular Electric Field Terahertz Emitters and Detectors
British Library Conference Proceedings | 1997
|Design guidelines for terahertz mixers and detectors
IEEE | 2005
|