1.55 /spl mu/m strain-compensated multi-quantum-well buried heterostructure lasers with InGaAsP quantum wells and InGaAlAs barriers were fabricated, yielding high optical power at low threshold currents. At 90/spl deg/C they support a direct modulation with 12.5 GHz.


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    Titel :

    InGaAsP/InGaAlAs 1.55 /spl mu/m strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90/spl deg/C


    Beteiligte:
    Mohrle, M. (Autor:in) / Morl, L. (Autor:in) / Sigmund, A. (Autor:in) / Suna, A. (Autor:in) / Reier, F. (Autor:in) / Roehle, H. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    199934 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    InGaAsP/InGaAlAs 1.55 mum Strain-Compensated MQW BH Lasers with 12.5 GHz Cut-Off Frequency at 90 ^oC

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2004


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    Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

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    Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

    Ma, C. S. / Wang, L. J. / Liu, S. Y. | British Library Online Contents | 2001