1.55 /spl mu/m strain-compensated multi-quantum-well buried heterostructure lasers with InGaAsP quantum wells and InGaAlAs barriers were fabricated, yielding high optical power at low threshold currents. At 90/spl deg/C they support a direct modulation with 12.5 GHz.
InGaAsP/InGaAlAs 1.55 /spl mu/m strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90/spl deg/C
2004-01-01
199934 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
InGaAsP/InGaAlAs 1.55 mum Strain-Compensated MQW BH Lasers with 12.5 GHz Cut-Off Frequency at 90 ^oC
British Library Conference Proceedings | 2004
|Direct Modulation Properties of 1.55-μm InGaAsP/InP Microring Lasers
British Library Online Contents | 2008
|Direct Modulation Properties of 1.55-μm InGaAsP/InP Microring Lasers
British Library Online Contents | 2008
|Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers
British Library Online Contents | 2001
|Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers
British Library Online Contents | 2001
|