A high mirror reflectivity of 62% is obtained for InGaN/GaN lasers using a deeply etched semiconductor/air DBR structure. The optimum design for the DBR mirrors with tilted sidewalls differs from the conventional /spl lambda//(4n) design.


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    Titel :

    GaN-based blue laser diodes with deeply etched high-reflectivity DBR mirrors


    Beteiligte:
    Saitoh, T. (Autor:in) / Kumagai, M. (Autor:in) / Wang, H. (Autor:in) / Tawara, T. (Autor:in) / Nishida, T. (Autor:in) / Akasaka, T. (Autor:in) / Kobayashi, N. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    85059 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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