The effects of ionizing radiation and displacement damage on TaOx memristors are evaluated. Devices show little response to 10 keV x-rays up to 10 Mrad(Si). Co60 gamma rays and 4.5 MeV protons did not change the resistances significantly at levels up to 2.5 Mrad(Si) and 5 Mrad(Si) respectively. 105 MeV and 480 MeV protons cause switching of the memristors from high to low resistance states in some cases, but do not exhibit a consistent degradation. 800 keV silicon ions are observed to cause resistance degradation, with an inverse dependence of resistance on oxygen vacancy density. Variation between different devices appears to be a key factor in determining the electrical response resulting from irradiation. The proposed degradation mechanism likely involves the creation of oxygen vacancies, but a better fundamental understanding of switching is needed before a definitive understanding of radiation degradation can be achieved.


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    Titel :

    Total ionizing dose and displacement damage effects on TaOx memristive memories


    Beteiligte:
    Hughart, D. R. (Autor:in) / Dalton, S. M. (Autor:in) / Mickel, P. R. (Autor:in) / Dodd, P. E. (Autor:in) / Shaneyfelt, M. R. (Autor:in) / Bielejec, E. (Autor:in) / Vizkelethy, G. (Autor:in) / Marinella, M. J. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.03.2013


    Format / Umfang :

    1855296 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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