We have demonstrated the diode end-pumped high-brightness Nd3+:YAG microchip lasers, passively Q-switched by Cr4+:YAG as a saturable absorber (SA). In order to optimize the output characteristic of the laser, we have investigated the transmission of Cr4+:YAG, and acquired the dependence of the pulse energy density on the initial transmission with the final transmission that was provided from the measurement. As a result, its maximum output pulse energy was 0.95 mJ with the pulse width of 480 ps and the peak power was 1.7 MW and a beam quality was M2= 1.05 with 100 Hz repetition frequency.
Diode-pumped passively Q-switched high-brightness microchip lasers
2005-01-01
258530 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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