We have demonstrated the diode end-pumped high-brightness Nd3+:YAG microchip lasers, passively Q-switched by Cr4+:YAG as a saturable absorber (SA). In order to optimize the output characteristic of the laser, we have investigated the transmission of Cr4+:YAG, and acquired the dependence of the pulse energy density on the initial transmission with the final transmission that was provided from the measurement. As a result, its maximum output pulse energy was 0.95 mJ with the pulse width of 480 ps and the peak power was 1.7 MW and a beam quality was M2= 1.05 with 100 Hz repetition frequency.


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    Titel :

    Diode-pumped passively Q-switched high-brightness microchip lasers


    Beteiligte:
    Sakai, H. (Autor:in) / Akihiro Sone, (Autor:in) / Hirohumi Kan, (Autor:in) / Taira, T. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    258530 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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