In this presentation, we will discuss data resulting from high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM) and photoluminescence studies comparing QDs to Qdashes. Both structures are grown on GaAs substrates using InAs coverage on a thin In/sub x/Ga/sub 1-x/As layer. Both structures include an AlGaAsSb metamorphic buffer to grade the lattice constant from the GaAs substrate to the InGaAs matrix. HRTEM images of a Qdash cleaved along the [110] and [1-10] crystal plane, respectively. The lattice constant is determined from the images and compared.
Crystallographic anisotropy in InAs quantum dashes on GaAs
2003-01-01
209953 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Crystallographic Anisotropy in InAs Quantum Dashes on GaAs
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