In this presentation, we will discuss data resulting from high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM) and photoluminescence studies comparing QDs to Qdashes. Both structures are grown on GaAs substrates using InAs coverage on a thin In/sub x/Ga/sub 1-x/As layer. Both structures include an AlGaAsSb metamorphic buffer to grade the lattice constant from the GaAs substrate to the InGaAs matrix. HRTEM images of a Qdash cleaved along the [110] and [1-10] crystal plane, respectively. The lattice constant is determined from the images and compared.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Crystallographic anisotropy in InAs quantum dashes on GaAs


    Beteiligte:
    Huffaker, D.L. (Autor:in) / Balakrishnan, G. (Autor:in) / Huang, S. (Autor:in) / Dawson, L.R. (Autor:in) / Hains, C.P. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    209953 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Crystallographic Anisotropy in InAs Quantum Dashes on GaAs

    IEEE | British Library Conference Proceedings | 2003


    Dots & Dashes

    Hacker, Joseph F. / Krykewycz, Gregory R. / Meconi, Jane M. | Transportation Research Record | 2009


    DS AND DASHES

    Jackson, Paul | Online Contents | 1995


    GMFanuc spot welds doors and dashes

    Wilson, M. | Tema Archiv | 1991


    Differential Gain of Closely Spaced Energy States in Quantum Dashes

    Qasaimeh, O. | British Library Online Contents | 2010