In this presentation, we will discuss data resulting from high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM) and photoluminescence studies comparing QDs to Qdashes. Both structures are grown on GaAs substrates using InAs coverage on a thin In/sub x/Ga/sub 1-x/As layer. Both structures include an AlGaAsSb metamorphic buffer to grade the lattice constant from the GaAs substrate to the InGaAs matrix. HRTEM images of a Qdash cleaved along the [110] and [1-10] crystal plane, respectively. The lattice constant is determined from the images and compared.
Crystallographic anisotropy in InAs quantum dashes on GaAs
01.01.2003
209953 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Crystallographic Anisotropy in InAs Quantum Dashes on GaAs
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