The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0 V. Therefore, the studied device provides the promise for microwave circuit applications.


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    Titel :

    An InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)


    Beteiligte:
    Chuang, H.M. (Autor:in) / Lin, K.W. (Autor:in) / Chen, C.Y. (Autor:in) / Chen, J.Y. (Autor:in) / Kao, C.I. (Autor:in) / Liu, W.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    161956 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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