We report InGaAs/InP uni-traveling-carrier photodiodes with thick depletion region with RF output power of 19 dBm at 25 GHz and 25 dBm at 5.5 GHz.
High-speed high-current InGaAs/InP photodiode with thick depletion region
2005-01-01
184323 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High-Speed High-Current InGaAs/Inp Photodiode with Thick Depletion Region
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