In this paper, we report a novel implant VCSELs utilizing silicon implantation induced disordering. This VCSELs exhibit kink-free current-light output performance with threshold currents /spl sim/2.2 mA, and the slope efficiencies /spl sim/0.45 W/A. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps.


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    Titel :

    Characterization of 850 nm AlGaAs/GaAs implant vertical cavity emitting lasers utilizing silicon implantation induced disordering


    Beteiligte:
    Kuo, H.C. (Autor:in) / Shu, W.C. (Autor:in) / Ya-hsien Chang, (Autor:in) / Fang-i Lai, (Autor:in) / Li-Hung Lai, (Autor:in) / Wang, S.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    77900 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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