Temperature dependence of the gain characteristics in a 1.31-/spl mu/m GaInAsP/InP quantum-well laser was measured and compared with that in a 0.98 /spl mu/m GaInAs/GaAs laser. It was found that the low characteristic temperature T/sub 0/ in the 1.31-/spl mu/m laser was determined by the temperature dependence of the transparent current density J/sub tr/.


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    Titel :

    Experimental analysis of characteristic temperature in quantum-well semiconductor lasers


    Beteiligte:
    Higashi, T. (Autor:in) / Yamamoto, T. (Autor:in) / Kubota, S. (Autor:in) / Ogita, S. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    193684 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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