Blue nitride semiconductor laser diodes and LEDs have given great impact on both industries and fundamental research. Particularly, blue vertical cavity surface emitting lasers (VCSELs) are expected to play an important role in high density optical storage technologies of the next generation. The main difficulty however for the VCSELs is the crystal growth of highly reflective nitride mirrors. In the paper, we show our recent achievement on growth, optical characterization, and device demonstration for blue nitride-based VCSELs operated at room temperature. In addition, room temperature Fabry-Perot type InGaN quantum dot (QD) lasers are demonstrated.


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    Titel :

    Progress on GaN-based blue light emitting VCSELs and quantum dot lasers


    Beteiligte:
    Arakawa, Y. (Autor:in) / Someya, T. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    281650 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch






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