We report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 μm2 giving an extinction ratio of ~10 dB for a wavelength range of 1580 - 1610 nm. In addition, monolithic integration of both evanescent-coupled Ge electro-absorption modulator and Ge p-i-n photodetector is demonstrated. This high speed low power electro-absorption modulator is extremely useful in developing CMOS-compatible integrated silicon photonics circuits for short reach optical communication links.


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    Titel :

    Germanium electro-absorption modulator for power efficient optical links


    Beteiligte:
    Lim, Andy Eu-Jin (Autor:in) / Tsung-Yang Liow, (Autor:in) / Ning Duan, (Autor:in) / Liang Ding, (Autor:in) / Mingbin Yu, (Autor:in) / Lo, G. Q. (Autor:in) / Kwong, D. L. (Autor:in)


    Erscheinungsdatum :

    01.10.2011


    Format / Umfang :

    781386 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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