We report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 μm2 giving an extinction ratio of ~10 dB for a wavelength range of 1580 - 1610 nm. In addition, monolithic integration of both evanescent-coupled Ge electro-absorption modulator and Ge p-i-n photodetector is demonstrated. This high speed low power electro-absorption modulator is extremely useful in developing CMOS-compatible integrated silicon photonics circuits for short reach optical communication links.
Germanium electro-absorption modulator for power efficient optical links
01.10.2011
781386 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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