Issues pertinent to the development of a compact model for predicting the drain current-voltage characteristics of coaxial-geometry, Schottky-barrier, carbon-nanotube field-effect transistors are discussed. Information on the non-equilibrium barrier shapes at the source-tube and drain-tube contacts is inferred from exact 2-D solutions to Poisson's equation at equilibrium and Laplace's equation. This information is then used in a non-equilibrium flux approach to create a model that accounts for tunneling through both barriers and computes the drain current in the case of ballistic transport. For (16,0) tubes and a gate/tube-radius ratio of 10, saturation drain currents of about 1 /spl mu/m are predicted.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Towards a compact model for Schottky-barrier nanotube FETs


    Beteiligte:
    Castro, L.C. (Autor:in) / John, D.L. (Autor:in) / Pulfrey, D.L. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    241247 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Towards a Compact Model for Schottky-Barrier Nanotube FETs

    Castro, L. C. / John, D. L. / Pulfrey, D. L. et al. | British Library Conference Proceedings | 2002


    Compact NRD-Guide Switch by Using Schottky Barrier Diodes

    Liu, F. / Wang, W. / Zhou, L. et al. | British Library Online Contents | 2003


    Schottky-Barrier Focal Plane Array Technology

    Kosonocky, Walter F. | SPIE | 1990



    AIAs Diffusion/Schottky Barrier on GaAs

    Kaiser, William J. / Grunthaner, Frank J. / Bell, L. Douglas et al. | NTRS | 1990