An analytic solution is obtained for the three-dimensional heat diffusion equation applied to a model for a multifinger power transistor. It predicts that the thermal instability takes place based on localized heating and positive feedback. The condition of thermal stability found by Navon and Miller [1] differs from that encountered in this paper.


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    Titel :

    Thermal Instability and Secondary Breakdown in Power Transistors


    Beteiligte:
    Wang, Paul P. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1971-11-01


    Format / Umfang :

    1078636 byte




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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