An analytic solution is obtained for the three-dimensional heat diffusion equation applied to a model for a multifinger power transistor. It predicts that the thermal instability takes place based on localized heating and positive feedback. The condition of thermal stability found by Navon and Miller [1] differs from that encountered in this paper.
Thermal Instability and Secondary Breakdown in Power Transistors
IEEE Transactions on Aerospace and Electronic Systems ; AES-7 , 6 ; 1195-1200
1971-11-01
1078636 byte
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch
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