To make a low electrical resistance Al line, i.e. to make a thick Al layer, we selected a transversely excited atmospheric (TEA) CO/sub 2/ laser with a long penetration depth. AlN shows a moderate absorption coefficient in the mid infrared range over 10 /spl mu/m and it is possible to modify the surface of the AlN ceramics by irradiation with a TEA CO/sub 2/ laser. The technique is applicable to the drawing of an electrical circuit. The aluminum thickness dependence on irradiation shot number is also presented.


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    Titel :

    Formation of very low-resistance aluminum layer on AlN ceramics by TEA CO/sub 2/ laser irradiation for direct laser writing of electric circuit


    Beteiligte:
    Takahashi, A. (Autor:in) / Yabe, H. (Autor:in) / Obara, M. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    168855 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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