To make a low electrical resistance Al line, i.e. to make a thick Al layer, we selected a transversely excited atmospheric (TEA) CO/sub 2/ laser with a long penetration depth. AlN shows a moderate absorption coefficient in the mid infrared range over 10 /spl mu/m and it is possible to modify the surface of the AlN ceramics by irradiation with a TEA CO/sub 2/ laser. The technique is applicable to the drawing of an electrical circuit. The aluminum thickness dependence on irradiation shot number is also presented.
Formation of very low-resistance aluminum layer on AlN ceramics by TEA CO/sub 2/ laser irradiation for direct laser writing of electric circuit
1996-01-01
168855 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1996
|Aluminum Layer Formation on Aluminum Nitride Ceramic by Irradiation with a TEA CO2 Laser
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