The basic problems of the receiving p-n junctions in ion implanted Mg/sup +//InSb after CO/sub 2/-laser irradiation and in p-InSb and p-InAs after ruby laser irradiation are represented. Proper volt-ampere characteristics are analyzed. The basic physical mechanisms of receiving these structures are discussed too. A basic cause of the difference these p-n junctions is various mechanisms of irreversible interaction light and semiconductor (self-absorption for ruby laser irradiation and "damage"-absorption for CO/sub 2/-laser irradiation).
The problem of the creation stable p-n junctions with help the methods of relaxed optics in InSb and InAs
2005-01-01
489664 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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