Low-threshold, low-noise GaInP-AlGaInP visible compressively strained QW laser diodes are of great interest for applications like optical storage systems and low-cost, short-range data transmission via plastic optical fiber. In addition to a stable lateral single mode operation even at high injection currents, these applications require a low temperature dependence of the output parameters. The latter is a major problem in the GaInP-AlGaInP material system, since barrier heights for carriers are restricted. We developed a simple self-aligning ridge-waveguide laser process based on ECR-RIE dry etching with an Ar/CCl/sub 2/F/sub 2/ plasma and an additional wet etching step.


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    Titel :

    Low-threshold high quantum efficiency 670 nm GaInP/AlGaInP ridge-waveguide lasers


    Beteiligte:
    Kuhn, J. (Autor:in) / Geng, C. (Autor:in) / Scholz, F. (Autor:in) / Schweizer, H. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    152747 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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