This paper demonstrates MOCVD growth of InGaAsN quantum wells and fabrication of vertical cavity surface emitting lasers (VCSELs). Results on the modulation and high temperature characteristics of 1.3 /spl mu/m-range InGaAsN vertical cavity surface emitting lasers (VCSELs) are also presented. Over 1 mW of single-mode output power is obtained at 80/spl deg/C. Clear eye opening at 2.5 Gb/s and 10 Gb/s are obtained up to 120/spl deg/C and 90/spl deg/C, respectively.


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    Titel :

    MOCVD growth of InGaAsN QWs and 1.3 /spl mu/m VCSELs


    Beteiligte:
    Takeuchi, T. (Autor:in) / Chang, Y.-L. (Autor:in) / Leary, M. (Autor:in) / Mars, D. (Autor:in) / Tandon, A. (Autor:in) / Lin, C.K. (Autor:in) / Twist, R. (Autor:in) / Belov, S. (Autor:in) / Bour, D. (Autor:in) / Tan, M. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    153445 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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