The laser used in this study has four contacts corresponding to a saturable absorber (75 /spl mu/m), a gain section (750 /spl mu/m), a phase control section (150 /spl mu/m) and a DBR (90 /spl mu/m). Both the absorber and gain sections consist of three InGaAs strained quantum wells separated by InGaAsP quaternary barriers. A 1.3-/spl mu/m bandgap wavelength InGaAsP was used for the phase control section and DBR waveguides. The absorber facet was coated for high-reflectivity, leading to self-colliding pulse mode-locking operation at the absorber and stabilised mode-locking.


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    Titel :

    Mode-locking at very high repetition rates in multi-contact DBR laser diodes


    Beteiligte:
    Arahira, S. (Autor:in) / Ogawa, Y. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    184250 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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