We propose a FIN type Germanium-Silicon heterojunction light-emitting diode with metal gates on both sides. The metal gates provide the plasmon enhancement and the electrical modulation of the PN diode. Using the numerical analysis, we propose the optimal device structure to achieve the best light emitting efficiency.
Design of surface-plasmon-enhanced Ge-Si light-emitting diode
01.09.2011
1055789 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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