Using a two-dimensional simulator, current collapse effect is simulated in GaN HEMTs. Dynamic picture of trapping of hot electron under gate pulse is discussed. The trapped charge may accumulate under punch-off gate voltage at gate edge drain side due to the large electric field strain. Self-heating effect is a consequence of the current collapse.


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    Titel :

    Current Collapse Simulation of GaN HEMTs


    Beteiligte:
    Hu, W.D. (Autor:in) / Chen, X.S. (Autor:in) / Quan, Z.J. (Autor:in) / Xia, C.S. (Autor:in) / Lu, W. (Autor:in)


    Erscheinungsdatum :

    2006-09-01


    Format / Umfang :

    1265756 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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