Summary form only given. The effect of carrier induced refractive index change in semiconductor lasers has been studied extensively in the past decade. Owing to the plasma effect, a region that is highly populated with charged carriers experiences a lowering of its refractive index. It is known that when the carrier density in the active region is increased by 10/sup 18/ cm/sup -3/, the refractive index can be depressed by an order of 10/sup -3/. In this report we describe the use of this mechanism to achieve horizontal confinement in a planar GaAs-AlGaAs slab waveguide. Currents are injected via two adjacent contact stripes forming anti-guiding regions immediately underneath the stripes. Light coupled into the channel between the stripes remains confined in that region.


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    Titel :

    Electrically controlled optical beam-steering/waveguiding in an active GaAs slab


    Beteiligte:
    Xuesong Dong, (Autor:in) / Wa, P.L. (Autor:in) / Loehr, J.P. (Autor:in) / Kaspi, R. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    257534 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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