This paper has realized quantum well diode lasers based on the (AlGaIn)(AsSb) material system. Broad-area (BA) lasers have been processed, high-reflection/anti-reflection (HR/AR) coated and the devices were mounted p-side down to improve heat sinking. In order to study the material gain of the GaInSb active layers and determine possible improvements of the power efficiency, a set of lasers with one, two and three quantum wells (QWs) have been fabricated and analyzed. Using an electro-optical model that includes the thermal effects in the active region, the optimum design for high power lasers is discussed considering the number of QWs.


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    Titel :

    GaSb-based diode lasers for power applications in the 2 /spl mu/m spectral range


    Beteiligte:
    Rattunde, M. (Autor:in) / Mermelstein, C. (Autor:in) / Schmitz, J. (Autor:in) / Kiefer, R. (Autor:in) / Pletschen, W. (Autor:in) / Walther, M. (Autor:in) / Wagner, J. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    74928 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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