We report for the first time femtosecond optically excited terahertz pulse emission from indium nitride (InN). MBE-grown InN is a novel electronic material. The THz emission from InN is strong compared to previously investigated semiconductors.
Pulsed terahertz emission from indium nitride thin films
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
2004-01-01
138398 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Growth and Properties of Indium Nitride Thin Films and InN Nanostructures
British Library Conference Proceedings | 2005
|Terahertz Emission form YBa~2Cu~3O~7~-~ Thin Films
British Library Conference Proceedings | 1997
|Terahertz emission from unbiased YBa2Cu3O7 films
IEEE | 1997
|