We report for the first time femtosecond optically excited terahertz pulse emission from indium nitride (InN). MBE-grown InN is a novel electronic material. The THz emission from InN is strong compared to previously investigated semiconductors.


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    Titel :

    Pulsed terahertz emission from indium nitride thin films


    Beteiligte:
    Ascazubi, R. (Autor:in) / Wilke, I. (Autor:in) / Denniston, K. (Autor:in) / Lu, H. (Autor:in) / Schaff, W.J. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    138398 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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