Strong room-temperature intersubband-emission is obtained at 4.7 microns by using deep quantum wells and high barriers in the active region. The emission linewidth is narrow (/spl sim/20 meV) and the 80 K to 300 K emission ratio is low (/spl sim/2).
Room-temperature, mid-IR (/spl lambda/ = 4.7 /spl mu/m) electroluminescence from single-stage intersubband GaAs-based edge emitters
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 3 pp. vol.1
2004-01-01
209183 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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