We deposited SiO/sub 2/ films at room temperature by 193-nm ArF laser ablation of silicone rubber in an oxygen atmosphere. For fabricating SiO/sub 2/ films, we found the optimum conditions of laser fluence and oxygen gas pressure. The Fourier transform infrared spectroscopy (FT-IR) spectra of films deposited at two different laser fluences are shown.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Fabrication of SiO/sub 2/ thin films by laser ablation of silicone


    Beteiligte:
    Okoshi, M. (Autor:in) / Kuramatsu, M. (Autor:in) / Inoue, N. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    119755 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Fabrication of SiO2 Thin Films by Laser Ablation of Silicone

    Okoshi, M. / Kuramatsu, M. / Inoue, N. et al. | British Library Conference Proceedings | 2001


    Fabrication of organic thin films by laser ablation deposition

    Fujii, T. / Shima, H. / Matsumoto, N. et al. | IEEE | 1995


    MD7 Fabrication of organic thin films by laser ablation deposition for electro-optics devices

    Fujii, T. / Shima, H. / Matsumoto, N. et al. | British Library Conference Proceedings | 1995


    F~2 laser ablation of silicone rubber [5662-38]

    Takao, H. / Okoshi, M. / Inoue, N. et al. | British Library Conference Proceedings | 2004


    PZT thin films grown by laser ablation [3572-12]

    Garcia, T. / De Posada, E. / Jimenez, E. et al. | British Library Conference Proceedings | 1999