We deposited SiO/sub 2/ films at room temperature by 193-nm ArF laser ablation of silicone rubber in an oxygen atmosphere. For fabricating SiO/sub 2/ films, we found the optimum conditions of laser fluence and oxygen gas pressure. The Fourier transform infrared spectroscopy (FT-IR) spectra of films deposited at two different laser fluences are shown.
Fabrication of SiO/sub 2/ thin films by laser ablation of silicone
01.01.2001
119755 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Fabrication of SiO2 Thin Films by Laser Ablation of Silicone
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