We have investigated the noise behaviour of gallium arsenide based broad area laser diodes using a self made 'portable' noise apparatus, which gives a noise detection floor of 2nV//spl radic//spl radic/Hz. We present a model for the noise system that allows subtraction of system background. This background subtraction takes into account the changes in differential resistance with bias that are inherent in semiconductor laser diodes. The variation of electrical noise with respect to material (i.e. aluminium containing and aluminium free lasers), device size, temperature and bias current was studied. All measurements were made over the range 100 Hz-10 kHz and at biasing currents significantly below the lasing threshold of the diodes.


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    Titel :

    Low frequency electrical noise characteristics of broad area 808 nm semiconductor laser diodes


    Beteiligte:
    Morgan, J. (Autor:in) / Harrison, I. (Autor:in) / Dods, S.R.A. (Autor:in) / Andrianov, A.V. (Autor:in) / Orton, J.W. (Autor:in) / Larkins, E.C. (Autor:in) / Nagle, J. (Autor:in) / Asonen, H. (Autor:in) / Nappi, J. (Autor:in) / Esquivias, I. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    135034 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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