We show the optically pumped results for two samples with room temperature target wavelengths of 2.5 and 2.7 /spl mu/m. The wafers are composed of 4 compressively strained QWs sandwiched in a 1 /spl mu/m AlGaInSb waveguide region. The samples were cleaved into 1-mm cavity lengths and pumped with 222-/spl mu/m stripe widths. The pump is a 980 nm array using 50 /spl mu/s pulses and 5% duty cycle. The 2.5 /spl mu/m wavelength sample is composed of 100 /spl Aring/ Ga/sub 0.60/In/sub 0.40/Sb wells with Al/sub 0.20/Ga/sub 0.48/In/sub 0.32/Sb barriers.


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    Titel :

    AlGaInSb/GaInSb multiple quantum well mid-infrared lasers


    Beteiligte:
    Pease, E.A. (Autor:in) / Dawson, L.R. (Autor:in) / Gray, A.L. (Autor:in) / Lester, L.F. (Autor:in) / Gianardi, D.M. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    157712 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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