The majority of semiconductor ring lasers reported to date, have been formed by etching the waveguide through the entire active region, which results in multi-lateral mode operation. In order to make single-lateral-mode ring lasers with etched facets, the waveguide and the facet have to be etched separately, with the facet deep etched, but the waveguide shallow etched.<>


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    Titel :

    Self-aligned single-lateral-mode waveguide diode ring lasers


    Beteiligte:
    Liang, J.J. (Autor:in) / Ballantyne, J.M. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    144886 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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