The majority of semiconductor ring lasers reported to date, have been formed by etching the waveguide through the entire active region, which results in multi-lateral mode operation. In order to make single-lateral-mode ring lasers with etched facets, the waveguide and the facet have to be etched separately, with the facet deep etched, but the waveguide shallow etched.<>
Self-aligned single-lateral-mode waveguide diode ring lasers
Proceedings of LEOS '93 ; 621-622
01.01.1993
144886 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Self-Aligned Single-Lateral-Mode Waveguide Diode Ring Lasers
British Library Conference Proceedings | 1993
|Unique aspects of waveguide diode ring lasers
IEEE | 1994
|Unique Aspects of Waveguide Diode Ring Lasers
British Library Conference Proceedings | 1994
|British Library Conference Proceedings | 2005
|