Summary form only given. Lasing wavelength of semiconductor lasers changes greatly as a function of temperature, primarily due to the temperature-induced change in the band gap of active region. This phenomenon, being thought to be inherent to semiconductor lasers, is a serious drawback in lasers that work in optical transition systems where the lasing wavelength should be strictly controlled. In this work, we report that the temperature dependence of emission energy can be greatly reduced in self-assembled InGaAs/GaAs quantum dots by an overgrowth of an In/sub x/Ga/sub 1-x/As (x/spl ges/0.25) layer. Energy shift was less than half of bulk GaAs between 4.2 K and 200 K when x=0.3.
Suppression of temperature sensitivity of interband emission energy by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dots
1999-01-01
206542 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Carrier Dynamics in Self-Assembled InGaAs/GaAs Quantum Dots and Their Application to Optical Devices
British Library Conference Proceedings | 2001
|TuQ4 Low Frequency Chirp Self-Assembled InGaAs/GaAs Quantum Dot Lasers
British Library Conference Proceedings | 2001
|