We determine ultrafast carrier dynamics characteristic of disordered semiconductors, including both dispersive transport and bimolecular recombination, via self-consistent modeling of time-resolved measurements in both the far-infrared (THz) and near-infrared spectral regions.
Ultrafast carrier dynamics in amorphous semiconductors determined by time-resolved THz and NIR spectroscopy
2005 Quantum Electronics and Laser Science Conference ; 1 ; 452-454 Vol. 1
2005-01-01
709767 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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