Research on polymer-based transistors is leading to the development of flexible, printable circuitry, which will be extremely cost effective to manufacture. However, the longterm performance of state-of-the-art polymer fileld effect transistors (pFETs) is limited by device degradation. We show that terahertz spectroscopy is an ideal tool to probe polymer device performance. Speciflcally we have monitored charge carrier trapping at the polymer-insulator boundary of a pFET. From these results we show that device degradation is primarily caused by a trapping of holes in the channel of the pFET, rather than by a change in hole mobility.


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    Titel :

    Polymer Transistor Performance Monitored by Terahertz Spectroscopy


    Beteiligte:
    Lloyd-Hughes, J. (Autor:in) / Richards, T. (Autor:in) / Castro-Camus, E. (Autor:in) / Sirringhaus, H. (Autor:in) / Herz, L.M. (Autor:in) / Johnston, M. B. (Autor:in)


    Erscheinungsdatum :

    01.09.2006


    Format / Umfang :

    1242368 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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