In this study, ZnCdSe-based II-VI LDs were fabricated on S-doped [100] oriented InP substrates with InGaAs buffer layers by molecular beam epitaxy, demonstrating the first successful lasing operation. The lasing wavelength was around 560 nm. Lattice matched ZnCdSe single quantum wells with 10 nm in thickness were employed as active region.


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    Titel :

    Yellow-green lasing emission from ZnCdSe/BeZnTe II-VI laser diodes on InP substrates


    Beteiligte:
    Song-Bek Che, (Autor:in) / Nomura, I. (Autor:in) / Kikuchi, A. (Autor:in) / Kishino, K. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    121570 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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