Summary form only. Aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN) and their alloys AlGaInN, the so called column-III nitrides are promising candidates as the material for fabrication of very short wavelength light emitters in the blue to near ultraviolet region, because they have direct transition type band structure with the bandgap energy ranging from 1.9 eV to 6.2 eV at room temperature (RT).<>


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    Titel :

    Crystal growth and properties of column-III nitrides for short wavelength light emitters


    Beteiligte:
    Akasaki, I. (Autor:in) / Amano, H. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    137988 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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