A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output ( over 30 dB) are observed.
Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region
1992-01-01
172004 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Side-Injection Light Control Bistable Laser Diode with InGaAs/InP MQW Saturable Absorption Region
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