The component (1) has semiconductor material layers arranged at an angle of preset degree relative to a longitudinal direction of the component. The component is made of semiconductor materials (2, 3) with a p-n junction, where the materials exhibit a photonic structure and a photonic bandgap. The structure is formed in a form of a Bragg stack, as two-or three-dimensional photonic crystal in a form of a bundle of photonic crystal fibers, as a periodic thin film system or as an edge filter. The Bragg stack is formed by periodic sequence of the layers with different optical refractive indices.
Halbleiterbauelement mit photonischer Strukturierung sowie Verwendungsmöglichkeiten
2010
Patent
Elektronische Ressource
Deutsch
Verwendungsmöglichkeiten von Gummigranulat im Straßenbau
HENRY – Bundesanstalt für Wasserbau (BAW) | 1977
|Verwendungsmöglichkeiten von Porensintern im Straßenbau
HENRY – Bundesanstalt für Wasserbau (BAW) | 1977
|Europäisches Patentamt | 2017
|Europäisches Patentamt | 2018
|