In a SiC power MISFET having a lateral surface of a trench formed in an upper surface of a SiC epitaxial substrate as a channel region, a silicon carbide semiconductor device having low resistance, high performance, and high reliability is realized. As a means therefor, a SiC power MISFET is formed as an island-shaped unit cell on an upper surface of an n-type SiC epitaxial substrate that is provided with a drain region on a bottom surface thereof, the SiC power MISFET including: an n-type current diffusion region that surrounds a p-type body layer contact region and an n-type source region in the indicated order in a plan view; a p-type body layer and an n-type JFET region; a trench that is formed on the body layer so as to span between the source region and the current diffusion region adjacent each other in a first direction and extends in the first direction; and a gate electrode embedded in the trench with a gate insulating film therebetween.


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    Titel :

    SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, THREE-PHASE MOTOR SYSTEM, AUTOMOBILE, AND RAILWAY VEHICLE


    Beteiligte:
    SUTO TAKERU (Autor:in) / TEGA NAOKI (Autor:in) / WATANABE NAOKI (Autor:in) / MORI YUKI (Autor:in) / HISAMOTO DIGH (Autor:in)

    Erscheinungsdatum :

    24.02.2022


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B61C Lokomotiven , LOCOMOTIVES



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