A device for determining a temperature of a semiconductor power switch with a built-in temperature-dependent gate resistor may include a non-inverting amplifier circuit comprising an operational amplifier and a feedback resistor. Inverting input of the operational amplifier may be connected to the semiconductor power switch such that a gain of the non-inverting amplifier circuit in a predefined frequency range of an input signal depends on the built-in temperature-dependent gate resistor and the feedback resistor and is a measure of the temperature of the semiconductor power switch. The feedback resistor may be disposed between a negative input and an output of the operational amplifier.


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    Titel :

    TEMPERATURE MEASUREMENT OF A POWER SEMICONDUCTOR SWITCHING ELEMENT


    Beteiligte:
    VARGHA BALÁZS (Autor:in)

    Erscheinungsdatum :

    2022-02-03


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    B62D MOTOR VEHICLES , Motorfahrzeuge / G01K MEASURING TEMPERATURE , Messen der Temperatur / H03F Verstärker , AMPLIFIERS



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